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| STGF10NB60SD N-CHANNEL 10A - 600V TO-220FP PowerMESHTM IGBT TYPE STGF10NB60SD s VCES 600 VCE(sat) (Max) @25C < 1.8 V IC @100C 10 A s s s s HIGHT INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCHTM ANTIPARALLEL DIODE 3 1 2 TO-220FP DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "S" identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1kHz). APPLICATIONS s LIGHT DIMMER s STATIC RELAYS s MOTOR CONTROL INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM (q) PTOT VISO Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at TC = 25C Collector Current (continuous) at TC = 100C Collector Current (pulsed) Total Dissipation at TC = 25C Derating Factor Insulation Withstand Voltage A.C.(t = 1 sec; Tc = 25C) Storage Temperature Max. Operating Junction Temperature Value 600 20 20 20 10 80 25 0.2 2500 -65 to 150 150 Unit V V V A A A W W/C V C C (q ) Pulse width limited by safe operating area June 2003 1/8 STGF10NB60SD THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 5 62.5 C/W C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) VBR(CES) ICES IGES Parameter Collector-Emitter Break-down Voltage Emitter Collector Break-down Voltage Collector cut-off Current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 A, VGE = 0, IC = 1 mA, VGE = 0, VCE = Max Rating ,Tj =25 C VCE = Max Rating ,Tj =125 C VGE = 20V , VCE = 0 Min. 600 20 10 100 100 Typ. Max. Unit V V A A nA ON (1) Symbol VGE(th) VCE(SAT) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE = VGE, IC = 250A VGE =15V, IC = 5 A, Tj= 25C VGE =15V, IC = 10 A, Tj= 25C VGE =15V, IC = 10 A, Tj= 125C Min. 2.5 1.15 1.35 1.25 Typ. Max. 5 1.8 Unit V V V V DYNAMIC Symbol gfs Cies Coes Cres Qg ICL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Latching Current Test Conditions VCE = 25 V , IC =10 A VCE = 25V, f = 1 MHz, VGE = 0 VCE = 400V, IC = 10 A, VGE = 15V Vclamp= 480V, RG= 1k, Tj= 125C 20 Min. 5 610 65 12 33 Typ. Max. Unit S pF pF pF nC A 2/8 STGF10NB60SD SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 480 V, IC = 10 A RG = 1K , VGE = 15 V VCC= 480 V, IC = 10 A RG=1K, VGE = 15 V Min. Typ. 0.7 0.46 8 0.6 Max. Unit s s A/s mJ SWITCHING OFF Symbol tc tr(Voff) tf Eoff(**) tc tr(Voff) tf Eoff(**) Parameter Cross-over Time Off Voltage Rise Time Fall Time Turn-off Switching Loss Cross-over Time Off Voltage Rise Time Fall Time Turn-off Switching Loss Vclamp = 480 V, IC = 10 A, RGE = 1K , VGE = 15 V Tj = 125 C Test Conditions Vclamp = 480 V, IC = 10 A, RGE = 1K , VGE = 15 V Min. Typ. 2.2 1.2 1.2 5.0 3.8 1.2 1.9 8.0 Max. Unit s s s mJ s s s mJ COLLECTOR-EMITTER DIODE Symbol If Ifm Vf trr Qrr Irrm Parameter Forward Current Forward Current pulsed Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 3.5 A If = 3.5 A, Tj = 125 C If = 7 A ,VR = 20 V, Tj =125C, di/dt = 100A/s 1.4 1.15 50 70 2.7 Test Conditions Min. Typ. Max. 7 56 1.9 Unit A A V V ns nC A (q)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (1)Pulse width limited by max. junction temperature. (**)Losses Include Also the Tail Switching Off Safe Operating Area Thermal Impedance 3/8 STGF10NB60SD Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Collector Current Gate Threshold Voltage vs Temperature 4/8 STGF10NB60SD Capacitance Variations Gate Charge vs Gate-Emitter Voltage Off Losses vs Gate Resistance Off Losses vs Collector Current Normalized Break-down Voltage vs Temp. Off Losses vs Temperature 5/8 STGF10NB60SD Emitter-Collector Diode Characteristics Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 6/8 STGF10NB60SD TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.5 1.5 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 G 7/8 STGF10NB60SD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 8/8 |
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